aot2918l/AOB2918L/aotf2918l 100v n-channel mosfet general description product summary v ds i d (at v gs =10v) 90a r ds(on) (at v gs =10v) < 7m w 100% uis tested 100% r g tested symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jc 70 45 260 maximum junction-to-case c/w c/w maximum junction-to-ambient a d 0.56 60 3.6 power dissipation a p dsm w t a =70c 1.33 t a =25c 2.1 267 41 133 20 t c =25c t c =100c power dissipation b p d 100 continuous drain current 61 pulsed drain current c continuous drain current g t a =25c i dsm 13 90 58 the aot2918l & AOB2918L & aotf2918l uses trench mosfet technology that is uniquely optimized to provide the most efficient high frequency switching performance. power losses are minimized due to an extremely low combination of r ds(on) and c rss .in addition, switching behavior is well controlled with a soft recovery body diode.this device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and led backlighting. v units parameter absolute maximum ratings t a =25c unless otherwise noted 100v aot2918l/AOB2918L aotf2918l drain-source voltage avalanche energy l=0.1mh c a t a =70c units junction and storage temperature range -55 to 175 c thermal characteristics parameter aot2918l/AOB2918L gate-source voltage maximum junction-to-ambient a c/w r q ja 15 60 t c =25c t c =100c mj avalanche current c i d 15 v 20 10 a 35 aotf2918l w a g ds to-263 d 2 pak g d s g d s d s g top view to-220f to-220 aotf2918l aot2918l AOB2918L rev 1 : aug 2011 www.aosmd.com page 1 of 7 www.datasheet.co.kr datasheet pdf - http://www..net/
aot2918l/AOB2918L/aotf2918l symbol min typ max units bv dss 100 v v ds =100v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 2.7 3.3 3.9 v i d(on) 260 a 5.6 7 t j =125c 9 12 g fs 34 s v sd 0.7 1 v i s 90 a c iss 2580 3430 pf c oss 1530 2035 pf c rss 37 63 pf r g 1.5 w q g (10v) 38 53 nc q gs 12 nc q gd 12 nc t d(on) 17 38 ns t r 24 53 ns t d(off) 30 66 ns t f 24 53 ns t rr 46 65 ns q rr 230 320 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. v ds =0v, v gs = 20v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage i d =250 m a, v gs =0v i dss m a zero gate voltage drain current m w on state drain current v gs =10v, v ds =5v v gs =10v, i d =20a gate-body leakage current v ds =v gs i d =250 m a v gs =10v, v ds =50v, i d =20a reverse transfer capacitance v gs =0v, v ds =50v, f=1mhz r ds(on) static drain-source on-resistance diode forward voltage maximum body-diode continuous current g input capacitance output capacitance switching parameters forward transconductance turn-on rise time turn-off delaytime v gs =10v, v ds =50v, r l =2.5 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time i s =1a,v gs =0v v ds =5v, i d =20a turn-on delaytime dynamic parameters i f =20a, di/dt=500a/ m s body diode reverse recovery charge body diode reverse recovery time i f =20a, di/dt=500a/ m s total gate charge gate source charge gate drain charge a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 15 0c. the value in any given application depends on the user's specific board design, and th e maximum temperature of 175c may be used if the p cb allows it. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =175c. ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r q ja is the sum of the thermal impedance from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175c. the soa curve provides a single pulse ratin g. g. the maximum current limited by package is 120a. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. rev1 : aug 2011 www.aosmd.com page 2 of 7 www.datasheet.co.kr datasheet pdf - http://www..net/
aot2918l/AOB2918L/aotf2918l typical electrical and thermal characteristics 17 52 10 0 18 40 0 20 40 60 80 100 2 3 4 5 6 7 8 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 0 2 4 6 8 10 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 200 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =10v i d =20a 4 8 12 16 20 5 6 7 8 9 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w ww w ) 25c 125c v ds =5v v gs =10v i d =20a 25c 125c 0 20 40 60 80 100 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics (note e) i d (a) 6v 7v 10v vgs=5v rev1 : aug 2011 www.aosmd.com page 3 of 7 www.datasheet.co.kr datasheet pdf - http://www..net/
aot2918l/AOB2918L/aotf2918l typical electrical and thermal characteristics 17 52 10 0 18 40 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 1000 2000 3000 4000 5000 0 20 40 60 80 100 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 200 300 400 500 600 700 800 900 1000 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to-ca se for aot2918l and AOB2918L (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 11: normalized maximum transient thermal imp edance for aot2918l and AOB2918L (note f) z q qq q jc normalized transient thermal resistance c oss c rss v ds =50v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175c t c =25c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 1000 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area for aot2918l and AOB2918L (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =175c t c =25c 100 m s r q jc =0.56c/w rev1 : aug 2011 www.aosmd.com page 4 of 7 www.datasheet.co.kr datasheet pdf - http://www..net/
aot2918l/AOB2918L/aotf2918l typical electrical and thermal characteristics 17 52 10 0 18 40 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 1000 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area for aotf2918l (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =175c t c =25c 100 m s 0 200 400 600 800 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to-ca se for aotf2918l (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 11: normalized maximum transient thermal imp edance for aotf2918l (note f) z q qq q jc normalized transient thermal resistance single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175c t c =25c r q jc =3.6c/w rev1 : aug 2011 www.aosmd.com page 5 of 7 www.datasheet.co.kr datasheet pdf - http://www..net/
aot2918l/AOB2918L/aotf2918l typical electrical and thermal characteristics 17 52 10 0 18 40 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) z q qq q ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 50 100 150 200 250 300 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note f) power dissipation (w) 0 20 40 60 80 100 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note f) current rating i d (a) 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) t a =25c r q ja =60c/w 10 100 1 10 100 time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (note c) i ar (a) peak avalanche current t a =25c t a =150c t a =100c t a =125c rev1 : aug 2011 www.aosmd.com page 6 of 7 www.datasheet.co.kr datasheet pdf - http://www..net/
aot2918l/AOB2918L/aotf2918l - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev1 : aug 2011 www.aosmd.com page 7 of 7 www.datasheet.co.kr datasheet pdf - http://www..net/
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